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SQD35N05-26L
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TYPICAL CHARACTERISTICS (T A = 25 °C, unless otherwise noted)
Vishay Siliconix
40
32
24
16
V GS = 10 V thru 4 V
40
32
24
16
T C = 25 °C
8
V GS = 3 V
8
T C = 125 °C
0
0
T C = - 55 °C
0
2
4
6
8
10
0
1
2
3
4
5
50
40
30
20
V DS - Drain-to-Source V oltage ( V )
Output Characteristics
T C = - 55 °C
T C = 25 °C
0.10
0.08
0.06
0.04
V GS - Gate-to-Source V oltage ( V )
Transfer Characteristics
T C = 125 °C
V GS = 4.5 V
10
0
0.02
0.00
V GS = 10 V
0
5
10
15
20
25
0
8
16
24
32
40
2.5
2.1
1.7
I D = 20 A
I D - Drain Current (A)
Transconductance
V GS = 10 V
100
10
1
I D - Drain Current (A)
On-Resistance vs. Drain Current
T J = 150 °C
1.3
0.9
0.5
0.1
0.01
0.001
T J = 25 °C
- 50
- 25
0
25
50
75
100
125
150
175
0.0
0.2
0.4
0.6
0.8
1.0
1.2
T J - Junction Temperature (°C)
On-Resistance vs. Junction Temperature
V SD - Source-to-Drain V oltage ( V )
Source Drain Diode Forward Voltage
S11-2046-Rev. D, 24-Oct-11
3
Document Number: 68839
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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